Nexperia PSMN1R2-25YLC,115 N-channel MOSFET, 100 A, 25 V, 4-Pin SOT-669
Product Information
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
4.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Maximum Gate Threshold Voltage:
1.95V
Package Type:
LFPAK, SOT-669
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.05V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
66 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
179 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.7 mΩ
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This is N-channel MOSFET 100 A 25 V 4-Pin SOT-669 manufactured by Nexperia. The manufacturer part number is PSMN1R2-25YLC,115. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.1mm wide. The product offers single transistor configuration. It has a maximum of 25 v drain source voltage. The product carries 1.95v of maximum gate threshold voltage. The package is a sort of lfpak, sot-669. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.05v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 66 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 179 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 1.7 mω maximum drain source resistance.
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