Rohm Semiconductor R6003KND4TL1

R6003KND4TL1 Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-261-3
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs:
8 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
185 pF @ 25 V
standardLeadTime:
19 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223-3
Current - Continuous Drain (Id) @ 25°C:
1.3A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Rohm Semiconductor. The manufacturer part number is R6003KND4TL1. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5.5v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-261-3. It has a maximum Rds On and voltage of 1.5ohm @ 1a, 10v. The maximum gate charge and given voltages include 8 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 7.8w (tc). The product's input capacitance at maximum includes 185 pf @ 25 v. It has a long 19 weeks standard lead time. The product is available in surface mount configuration. sot-223-3 is the supplier device package value. The continuous current drain at 25°C is 1.3a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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