STMicroelectronics STP13NM60N
Product Information
Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
30 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
90 W
Series:
MDmesh
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
15.75mm
Maximum Drain Source Resistance:
360 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
360mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
90W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
790 pF @ 50 V
standardLeadTime:
16 Weeks
Mounting Type:
Through Hole
Series:
MDmesh™ II
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP13
ECCN:
EAR99
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Yes. We ship STP13NM60N Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STP13NM60N. While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.6mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 30 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 90 w maximum power dissipation. The product mdmesh, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 15.75mm. It provides up to 360 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 360mohm @ 5.5a, 10v. The maximum gate charge and given voltages include 30 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 90w (tc). The product's input capacitance at maximum includes 790 pf @ 50 v. It has a long 16 weeks standard lead time. The product mdmesh™ ii, is a highly preferred choice for users. to-220 is the supplier device package value. The continuous current drain at 25°C is 11a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stp13, a base product number of the product. The product is designated with the ear99 code number.
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