IXYS IXTA4N65X2
Product Information
Category:
Power MOSFET
Dimensions:
10.41 x 9.4 x 4.7mm
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
9.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.3 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
455 pF @ 25 V
Length:
10.41mm
Pin Count:
3
Forward Transconductance:
4.2S
Typical Turn-Off Delay Time:
57 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
80 W
Series:
X2-Class
Maximum Gate Source Voltage:
±30 V
Height:
4.7mm
Typical Turn-On Delay Time:
22 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
850 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
850mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs:
8.3 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
455 pF @ 25 V
standardLeadTime:
47 Weeks
Mounting Type:
Surface Mount
Series:
Ultra X2
Supplier Device Package:
TO-263
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTA4
ECCN:
EAR99
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FAQs
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You can order IXYS brand products with IXTA4N65X2 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXTA4N65X2. You can also check on our website or by contacting our customer support team for further order details on IXYS IXTA4N65X2.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11906566 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11906566.
Yes. We ship IXTA4N65X2 Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is IXTA4N65X2. It is of power mosfet category . The given dimensions of the product include 10.41 x 9.4 x 4.7mm. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.4mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-263. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 8.3 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 455 pf @ 25 v . Its accurate length is 10.41mm. It contains 3 pins. The forward transconductance is 4.2s . Whereas, its typical turn-off delay time is about 57 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 80 w maximum power dissipation. The product x2-class, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 4.7mm. In addition, it has a typical 22 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 850 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 850mohm @ 2a, 10v. The maximum gate charge and given voltages include 8.3 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 80w (tc). The product's input capacitance at maximum includes 455 pf @ 25 v. It has a long 47 weeks standard lead time. The product ultra x2, is a highly preferred choice for users. to-263 is the supplier device package value. The continuous current drain at 25°C is 4a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixta4, a base product number of the product. The product is designated with the ear99 code number.
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