STMicroelectronics STF10NM60N
Product Information
The STF10NM60N from STMicroelectronics is a high-voltage N-channel MOSFET that offers low on-resistance and quick switching functionality for effective power management in many applications. This MOSFET provides consistent power switching in industrial, automotive, and consumer electronics applications because of its cutting-edge silicon technology and durable architecture.
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
19 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W
Series:
MDmesh
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
16.4mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
550 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
550mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STF10NM60N Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2214582
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
540 pF @ 50 V
standardLeadTime:
16 Weeks
Mounting Type:
Through Hole
Series:
MDmesh™ II
Supplier Device Package:
TO-220FP
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STF10
ECCN:
EAR99
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Yes. We ship STF10NM60N Internationally to many countries around the world.
The STMicroelectronics STF10NM60N is a high-performance N-Channel MOSFET widely used in various applications, including power supplies, motor control, and inverters. This device offers several benefits, such as low on-resistance, fast switching speed, high thermal stability, and high maximum drain current. These features make the STF10NM60N a popular choice for designers and engineers looking for a reliable and high-performing power MOSFET.
Key Features and Benefits of STMicroelectronics STF10NM60N:
The STF10NM60N offers several features that make it a popular choice for designers, including
Versatile Uses of STMicroelectronics STF10NM60N:
The STF10NM60N is widely used in various applications due to its high performance and versatility. Some of the most common applications include:
The device is commonly used in power supplies due to its low on-resistance and fast switching speed. This helps to reduce power losses and improve the overall efficiency of the power supply.
The STF10NM60N is also commonly used in motor control applications due to its high maximum drain current and thermal stability. This allows the device to handle high power levels and operate reliably in high-temperature environments.
Inverter applications also benefit from the STF10NM60N's fast switching speed and low on-resistance. These features help to reduce power losses and improve the overall efficiency of the inverter.
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