STMicroelectronics STN3N45K3
Product Information
Maximum Drain Source Voltage:
450 V
Typical Gate Charge @ Vgs:
6 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
MDmesh K3, SuperMESH3
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4.5V
Height:
1.8mm
Width:
3.7mm
Length:
6.7mm
Minimum Gate Threshold Voltage:
3V
Package Type:
SOT-223
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
600 mA
Transistor Material:
Si
Channel Type:
N
Maximum Drain Source Resistance:
3.8 Ω
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
4Ohm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
9.5 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STN3N45K3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2346745
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
450 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
164 pF @ 50 V
standardLeadTime:
13 Weeks
Mounting Type:
Surface Mount
Series:
SuperMESH3™
Supplier Device Package:
SOT-223
Current - Continuous Drain (Id) @ 25°C:
600mA (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STN3
ECCN:
EAR99
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship STN3N45K3 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STN3N45K3. It has a maximum of 450 v drain source voltage. With a typical gate charge at Vgs includes 6 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. The product mdmesh k3, supermesh3, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 4.5v of maximum gate threshold voltage. In addition, the height is 1.8mm. Furthermore, the product is 3.7mm wide. Its accurate length is 6.7mm. Whereas its minimum gate threshold voltage includes 3v. The package is a sort of sot-223. It consists of 1 elements per chip. While 600 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It provides up to 3.8 ω maximum drain source resistance. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 50µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. It has a maximum Rds On and voltage of 4ohm @ 600ma, 10v. The maximum gate charge and given voltages include 9.5 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 450 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3w (ta). The product's input capacitance at maximum includes 164 pf @ 50 v. It has a long 13 weeks standard lead time. The product supermesh3™, is a highly preferred choice for users. sot-223 is the supplier device package value. The continuous current drain at 25°C is 600ma (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stn3, a base product number of the product. The product is designated with the ear99 code number.
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