Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin PG-TO 263 Infineon IPB65R190C7ATMA2
Product Information
Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolMOS
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
0.11 Ω
Package Type:
TO 263
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
31.2 A
Transistor Material:
Silicon
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is Silicon N-Channel MOSFET 31.2 A 650 V 3-Pin PG-TO 263 manufactured by Infineon. The manufacturer part number is IPB65R190C7ATMA2. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.11 ω maximum drain source resistance. The package is a sort of to 263. It consists of 1 elements per chip. While 31.2 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.
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