N-Channel MOSFET, 91 A, 60 V, 3-Pin DPAK onsemi NTD5C648NLT4G
Product Information
Maximum Continuous Drain Current:
91 A
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.1V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
17 nC @ 4.5
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
76 W
Maximum Gate Source Voltage:
±20 V
Height:
2.25mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
4.1 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 45A, 10V
edacadModel:
NTD5C648NLT4G Models
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/8636534
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
4.4W (Ta), 76W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2900 pF @ 30 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DPAK
Current - Continuous Drain (Id) @ 25°C:
22A (Ta), 91A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTD5C648
ECCN:
EAR99
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This is N-Channel MOSFET 91 A 60 V 3-Pin DPAK manufactured by onsemi. The manufacturer part number is NTD5C648NLT4G. While 91 a of maximum continuous drain current. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.1v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 17 nc @ 4.5. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 76 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 2.25mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 4.1 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.1v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 4.1mohm @ 45a, 10v. The maximum gate charge and given voltages include 17 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 4.4w (ta), 76w (tc). The product's input capacitance at maximum includes 2900 pf @ 30 v. dpak is the supplier device package value. The continuous current drain at 25°C is 22a (ta), 91a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntd5c648, a base product number of the product. The product is designated with the ear99 code number.
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