Forward Voltage Vf:
1.2V
Width:
4.7 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
78nC
Package Type:
TO-220
Maximum Continuous Drain Current Id:
44A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
67mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
650V
Channel Type:
Type N
Length:
10.67mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Through Hole
Maximum Power Dissipation Pd:
312W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Series:
FCP
Height:
16.3mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 4.4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
67mOhm @ 22A, 10V
edacadModel:
FCP067N65S3 Models
Gate Charge (Qg) (Max) @ Vgs:
78 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5892164
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
312W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3090 pF @ 400 V
Mounting Type:
Through Hole
Series:
SuperFET® III
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
44A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCP067
ECCN:
EAR99