N-Channel MOSFET, 14 A, 650 V, 2 + Tab-Pin D2PAK ON Semiconductor FCB199N65S3
Product Information
Maximum Continuous Drain Current:
14 A
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
30 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
98 W
Maximum Gate Source Voltage:
±30 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
199 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 1.4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
199mOhm @ 7A, 10V
edacadModel:
FCB199N65S3 Models
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/7556791
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
98W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1225 pF @ 400 V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCB199
ECCN:
EAR99
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FAQs
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You can order onsemi brand products with FCB199N65S3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 14 A, 650 V, 2 + Tab-Pin D2PAK ON Semiconductor FCB199N65S3. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 14 A, 650 V, 2 + Tab-Pin D2PAK ON Semiconductor FCB199N65S3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21473326 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21473326.
Yes. We ship FCB199N65S3 Internationally to many countries around the world.
This is N-Channel MOSFET 14 A 650 V 2 + Tab-Pin D2PAK ON Semiconductor manufactured by onsemi. The manufacturer part number is FCB199N65S3. While 14 a of maximum continuous drain current. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 30 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 98 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 199 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 1.4ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 199mohm @ 7a, 10v. The maximum gate charge and given voltages include 30 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 98w (tc). The product's input capacitance at maximum includes 1225 pf @ 400 v. The product superfet® iii, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 14a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fcb199, a base product number of the product. The product is designated with the ear99 code number.
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