Forward Voltage Vf:
-1V
Width:
1.7 mm
Automotive Standard:
AEC-Q101
Typical Gate Charge Qg @ Vgs:
18.1nC
Package Type:
TSOP
Maximum Continuous Drain Current Id:
2.9A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
142mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
60V
Channel Type:
Type P
Length:
3.1mm
Standards/Approvals:
No
Pin Count:
6
Mount Type:
Surface
Maximum Power Dissipation Pd:
1.4W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
NTGS
Height:
1mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
111mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs:
18.1 nC @ 10 V
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTGS5120PT1G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/1961266
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
600mW (Ta)
standardLeadTime:
38 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
942 pF @ 30 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-TSOP
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
1.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTGS5120
ECCN:
EAR99