Infineon FP35R12N2T7B11BPSA1 3 Phase IGBT, 35 A 1200 V, 23-Pin Module, Chassis Mount
Product Information
Mounting Type:
Chassis Mount
Maximum Power Dissipation:
20 mW
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
7
Channel Type:
N
Maximum Continuous Collector Current:
35 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
Module
Configuration:
3 Phase
Pin Count:
23
Transistor Configuration:
3 Phase
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Yes. We ship FP35R12N2T7B11BPSA1 Internationally to many countries around the world.
This is 3 Phase IGBT 35 A 1200 V 23-Pin Module Chassis Mount manufactured by Infineon. The manufacturer part number is FP35R12N2T7B11BPSA1. The product is available in chassis mount configuration. Provides up to 20 mw maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 7 transistors . The product is available in [Cannel Type] channel. The product has a maximum 35 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of module. The product is available in 3 phase configuration. It contains 23 pins. The product offers 3 phase transistor configuration.
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