1200V N-ch SiC Trench MOSFET in 4pin Pac
Product Information
Maximum Drain Source Voltage:
1200 V
Typical Gate Charge @ Vgs:
60 nC @ 18V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
165 W
Maximum Gate Source Voltage:
22 V
Channel Type:
N
Maximum Gate Threshold Voltage:
5.6V
Maximum Drain Source Resistance:
104 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
31 A
Minimum Gate Threshold Voltage:
2.7V
Transistor Material:
SiC
Maximum Operating Temperature:
+175 °C
Pin Count:
4
Transistor Configuration:
Single
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FAQs
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You can order ROHM brand products with SCT3080KRC14 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of 1200V N-ch SiC Trench MOSFET in 4pin Pac. You can also check on our website or by contacting our customer support team for further order details on 1200V N-ch SiC Trench MOSFET in 4pin Pac.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET18339816 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ROHM" products on our website by using Enrgtech's Unique Manufacturing Part Number ET18339816.
Yes. We ship SCT3080KRC14 Internationally to many countries around the world.
This is 1200V N-ch SiC Trench MOSFET in 4pin Pac manufactured by ROHM. The manufacturer part number is SCT3080KRC14. It has a maximum of 1200 v drain source voltage. With a typical gate charge at Vgs includes 60 nc @ 18v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 165 w maximum power dissipation. It features a maximum gate source voltage of 22 v. The product is available in [Cannel Type] channel. The product carries 5.6v of maximum gate threshold voltage. It provides up to 104 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 31 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2.7v. The transistor is manufactured from highly durable sic material. It has a maximum operating temperature of +175 °c. It contains 4 pins. The product offers single transistor configuration.
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