Nch 600V 4A Power MOSFET
Product Information
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
10.5 nC @ 15 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
35 W
Maximum Gate Source Voltage:
±30 V
Maximum Gate Threshold Voltage:
7V
Height:
16.27mm
Width:
5mm
Length:
10.3mm
Maximum Drain Source Resistance:
1.43 Ω
Package Type:
TO-220FM
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4 A
Minimum Gate Threshold Voltage:
5V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is Nch 600V 4A Power MOSFET manufactured by ROHM. The manufacturer part number is R6004JNXC7G. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 10.5 nc @ 15 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 35 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. The product carries 7v of maximum gate threshold voltage. In addition, the height is 16.27mm. Furthermore, the product is 5mm wide. Its accurate length is 10.3mm. It provides up to 1.43 ω maximum drain source resistance. The package is a sort of to-220fm. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 5v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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