Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
12.3 nC @ 10 V (N Channel), 38 nC @ 10 V (P Channel)
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
7 W
Series:
HP8M31
Maximum Gate Source Voltage:
±20 V, ±20 V
Maximum Gate Threshold Voltage:
3 (N Channel) V, 3 (P Channel) V
Height:
1.1mm
Width:
5.8mm
Length:
5mm
Maximum Drain Source Resistance:
73 mΩ
Package Type:
HSOP8
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
8.5 A
Minimum Gate Threshold Voltage:
1 (N Channel) V, 1 (P Channel) V
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
This is MOSFET manufactured by ROHM. The manufacturer part number is HP8M31TB1. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 12.3 nc @ 10 v (n channel), 38 nc @ 10 v (p channel). The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 7 w maximum power dissipation. The product hp8m31, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v, ±20 v. The product carries 3 (n channel) v, 3 (p channel) v of maximum gate threshold voltage. In addition, the height is 1.1mm. Furthermore, the product is 5.8mm wide. Its accurate length is 5mm. It provides up to 73 mω maximum drain source resistance. The package is a sort of hsop8. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 8.5 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1 (n channel) v, 1 (p channel) v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins.
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