Nch 30V 4A Small Signal MOSFET
Product Information
Maximum Continuous Drain Current:
4 A
Width:
1.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
SOT-457T
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.3 nC @ 5 V
Channel Type:
N
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.25 W
Series:
RQ6E040XN
Maximum Gate Source Voltage:
±20 V
Height:
0.95mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
30 mΩ
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Yes. We ship RQ6E040XNTCR Internationally to many countries around the world.
This is Nch 30V 4A Small Signal MOSFET manufactured by ROHM. The manufacturer part number is RQ6E040XNTCR. While 4 a of maximum continuous drain current. Furthermore, the product is 1.8mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of sot-457t. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3.3 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.25 w maximum power dissipation. The product rq6e040xn, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.95mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 30 mω maximum drain source resistance.
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