Nch 650V 9A Power MOSFET
Product Information
Maximum Continuous Drain Current:
9 A
Width:
9.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-263S
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
24 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
94 W
Series:
R6509ENJ
Maximum Gate Source Voltage:
±30 V
Height:
4.7mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
580 mΩ
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Yes. We ship R6509ENJTL Internationally to many countries around the world.
This is Nch 650V 9A Power MOSFET manufactured by ROHM. The manufacturer part number is R6509ENJTL. While 9 a of maximum continuous drain current. Furthermore, the product is 9.2mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-263s. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 24 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 94 w maximum power dissipation. The product r6509enj, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 4.7mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 580 mω maximum drain source resistance.
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