Pch -30V -80A Power MOSFET
Product Information
Maximum Continuous Drain Current:
80 A
Width:
5.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
HSOP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
175 nC @ 10 V
Channel Type:
P
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
40 W
Series:
RS1E260AT
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
3.1 mΩ
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Yes. We ship RS1E260ATTB1 Internationally to many countries around the world.
This is Pch -30V -80A Power MOSFET manufactured by ROHM. The manufacturer part number is RS1E260ATTB1. While 80 a of maximum continuous drain current. Furthermore, the product is 5.8mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of hsop. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 175 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 40 w maximum power dissipation. The product rs1e260at, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 3.1 mω maximum drain source resistance.
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