Pch -20V -5.5A Middle Power MOSFET
Product Information
Maximum Continuous Drain Current:
5.5 A
Width:
1.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.2V
Package Type:
SOT-363T
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15.2 nC @ 4.5 V
Channel Type:
P
Length:
2.1mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1 W
Series:
RF6C055BC
Maximum Gate Source Voltage:
±8 V
Height:
0.82mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
25.8 mΩ
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Yes. We ship RF6C055BCTCR Internationally to many countries around the world.
This is Pch -20V -5.5A Middle Power MOSFET manufactured by ROHM. The manufacturer part number is RF6C055BCTCR. While 5.5 a of maximum continuous drain current. Furthermore, the product is 1.8mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1.2v of maximum gate threshold voltage. The package is a sort of sot-363t. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15.2 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2.1mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1 w maximum power dissipation. The product rf6c055bc, is a highly preferred choice for users. It features a maximum gate source voltage of ±8 v. In addition, the height is 0.82mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 25.8 mω maximum drain source resistance.
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