ROHM RQ5C025TPTL P-channel MOSFET, 2.5 A, 20 V RTR025P02, 3-Pin TSMT
Product Information
Maximum Continuous Drain Current:
2.5 A
Transistor Material:
Si
Width:
1.6mm
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
2V
Package Type:
TSMT-3
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7 nC @ 4.5 V
Channel Type:
P
Length:
2.9mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1 W
Series:
RTR025P02
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.85mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
160 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ROHM RQ5C025TPTL P-channel MOSFET, 2.5 A, 20 V RTR025P02, 3-Pin TSMT. You can also check on our website or by contacting our customer support team for further order details on ROHM RQ5C025TPTL P-channel MOSFET, 2.5 A, 20 V RTR025P02, 3-Pin TSMT.
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Yes. We ship RQ5C025TPTL Internationally to many countries around the world.
This is P-channel MOSFET 2.5 A 20 V RTR025P02 3-Pin TSMT manufactured by ROHM. The manufacturer part number is RQ5C025TPTL. While 2.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.6mm wide. It has a maximum of 20 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of tsmt-3. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.7v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 7 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2.9mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1 w maximum power dissipation. The product rtr025p02, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.85mm. Its forward diode voltage is 1.2v . It provides up to 160 mω maximum drain source resistance.
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