ROHM QS8M51TR Dual N/P-channel MOSFET, 1.5 (P Channel) A, 2 (N Channel) A, 100 (N Channel) V, 100 (P Channel) V QS8M51
Product Information
Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
4.7 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Series:
QS8M51
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.5 (N Channel) V, 2.5 (P Channel) V
Height:
0.8mm
Width:
2.5mm
Length:
3.1mm
Maximum Drain Source Resistance:
355 mΩ
Package Type:
TSMT-8
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
2 A, 1.5 A
Minimum Gate Threshold Voltage:
1 (N Channel) V, 1 (P Channel) V
Forward Diode Voltage:
1.2V
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ROHM QS8M51TR Dual N/P-channel MOSFET, 1.5 (P Channel) A, 2 (N Channel) A, 100 (N Channel) V, 100 (P Channel) V QS8M51. You can also check on our website or by contacting our customer support team for further order details on ROHM QS8M51TR Dual N/P-channel MOSFET, 1.5 (P Channel) A, 2 (N Channel) A, 100 (N Channel) V, 100 (P Channel) V QS8M51.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16916044 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ROHM" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16916044.
Yes. We ship QS8M51TR Internationally to many countries around the world.
This is Dual N/P-channel MOSFET 1.5 (P Channel) A 2 (N Channel) A 100 (N Channel) V 100 (P Channel) V QS8M51 manufactured by ROHM. The manufacturer part number is QS8M51TR. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 4.7 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.5 w maximum power dissipation. The product qs8m51, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. The product carries 2.5 (n channel) v, 2.5 (p channel) v of maximum gate threshold voltage. In addition, the height is 0.8mm. Furthermore, the product is 2.5mm wide. Its accurate length is 3.1mm. It provides up to 355 mω maximum drain source resistance. The package is a sort of tsmt-8. It consists of 2 elements per chip. While 2 a, 1.5 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1 (n channel) v, 1 (p channel) v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins.
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