Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
4.7 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Series:
QS8M51
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.5 (N Channel) V, 2.5 (P Channel) V
Height:
0.8mm
Width:
2.5mm
Length:
3.1mm
Maximum Drain Source Resistance:
355 mΩ
Package Type:
TSMT-8
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
2 A, 1.5 A
Minimum Gate Threshold Voltage:
1 (N Channel) V, 1 (P Channel) V
Forward Diode Voltage:
1.2V
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
