This is N-channel MOSFET 3.5 A 30 V RQ5E035BN 3-Pin TSMT manufactured by ROHM. The manufacturer part number is RQ5E035BNTCL. While 3.5 a of maximum continuous drain current. Furthermore, the product is 1.8mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of tsmt-3. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 6 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1 w maximum power dissipation. The product rq5e035bn, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.95mm. Its forward diode voltage is 1.2v . It provides up to 56 mω maximum drain source resistance.
RQ5E035BN, N-Channel Power MOSFET (30V, 3.5A)(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
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This is N-channel MOSFET 3.5 A 30 V RQ5E035BN 3-Pin TSMT manufactured by ROHM. The manufacturer part number is RQ5E035BNTCL. While 3.5 a of maximum continuous drain current. Furthermore, the product is 1.8mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of tsmt-3. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 6 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1 w maximum power dissipation. The product rq5e035bn, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.95mm. Its forward diode voltage is 1.2v . It provides up to 56 mω maximum drain source resistance.
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Don’t hesitate to ask questions for better clarification.