ROHM RZF013P01TL P-channel MOSFET, 1.3 A, 12 V RZF013P01, 3-Pin SOT-323T
Product Information
Maximum Continuous Drain Current:
1.3 A
Width:
1.8mm
Maximum Drain Source Voltage:
12 V
Maximum Gate Threshold Voltage:
1V
Package Type:
SOT-323
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.4 nC @ 4.5 V
Channel Type:
P
Length:
2.1mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
800 mW
Series:
RZF013P01
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
0.82mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
1.06 Ω
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ROHM RZF013P01TL P-channel MOSFET, 1.3 A, 12 V RZF013P01, 3-Pin SOT-323T. You can also check on our website or by contacting our customer support team for further order details on ROHM RZF013P01TL P-channel MOSFET, 1.3 A, 12 V RZF013P01, 3-Pin SOT-323T.
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Yes. We ship RZF013P01TL Internationally to many countries around the world.
This is P-channel MOSFET 1.3 A 12 V RZF013P01 3-Pin SOT-323T manufactured by ROHM. The manufacturer part number is RZF013P01TL. While 1.3 a of maximum continuous drain current. Furthermore, the product is 1.8mm wide. It has a maximum of 12 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of sot-323. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 2.4 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2.1mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 800 mw maximum power dissipation. The product rzf013p01, is a highly preferred choice for users. It features a maximum gate source voltage of -10 v, +10 v. In addition, the height is 0.82mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 1.06 ω maximum drain source resistance.
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