Enrgtech

Deliver to

United Kingdom

Categories

Brands

Part Numbers

Top Products

0

Nexperia PMXB360ENEAZ 3 N-channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215

PMXB360ENEAZ Nexperia  3 N-channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215
Nexperia

Product Information

Maximum Continuous Drain Current:
1.1 A
Width:
1.05mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
2.7V
Package Type:
DFN1010D-3, SOT1215
Number of Elements per Chip:
3
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3 nC @ 10 V
Channel Type:
N
Length:
1.15mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
6250 mW
Maximum Gate Source Voltage:
20 V
Height:
0.4mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
887 mΩ
RoHs Compliant
Checking for live stock

This is 3 N-channel MOSFET 1.1 A 80 V 4-Pin DFN1010D-3 SOT1215 manufactured by Nexperia. The manufacturer part number is PMXB360ENEAZ. While 1.1 a of maximum continuous drain current. Furthermore, the product is 1.05mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 80 v drain source voltage. The product carries 2.7v of maximum gate threshold voltage. The package is a sort of dfn1010d-3, sot1215. It consists of 3 elements per chip. Whereas its minimum gate threshold voltage includes 1.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 1.15mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 6250 mw maximum power dissipation. It features a maximum gate source voltage of 20 v. In addition, the height is 0.4mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 887 mω maximum drain source resistance.

pdf icon
Datasheet(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search PMXB360ENEAZ on website for other similar products.
We accept all major payment methods for all products including ET16889536. Please check your shopping cart at the time of order.
You can order Nexperia brand products with PMXB360ENEAZ directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Nexperia PMXB360ENEAZ 3 N-channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215. You can also check on our website or by contacting our customer support team for further order details on Nexperia PMXB360ENEAZ 3 N-channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16889536 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Nexperia" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16889536.
Yes. We ship PMXB360ENEAZ Internationally to many countries around the world.