This is 3 N-channel MOSFET 1.1 A 80 V 4-Pin DFN1010D-3 SOT1215 manufactured by Nexperia. The manufacturer part number is PMXB360ENEAZ. While 1.1 a of maximum continuous drain current. Furthermore, the product is 1.05mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 80 v drain source voltage. The product carries 2.7v of maximum gate threshold voltage. The package is a sort of dfn1010d-3, sot1215. It consists of 3 elements per chip. Whereas its minimum gate threshold voltage includes 1.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 1.15mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 6250 mw maximum power dissipation. It features a maximum gate source voltage of 20 v. In addition, the height is 0.4mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 887 mω maximum drain source resistance.
Datasheet(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
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You will get a confirmation email regarding your order of Nexperia PMXB360ENEAZ 3 N-channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215. You can also check on our website or by contacting our customer support team for further order details on Nexperia PMXB360ENEAZ 3 N-channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215.
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This is 3 N-channel MOSFET 1.1 A 80 V 4-Pin DFN1010D-3 SOT1215 manufactured by Nexperia. The manufacturer part number is PMXB360ENEAZ. While 1.1 a of maximum continuous drain current. Furthermore, the product is 1.05mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 80 v drain source voltage. The product carries 2.7v of maximum gate threshold voltage. The package is a sort of dfn1010d-3, sot1215. It consists of 3 elements per chip. Whereas its minimum gate threshold voltage includes 1.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 1.15mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 6250 mw maximum power dissipation. It features a maximum gate source voltage of 20 v. In addition, the height is 0.4mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 887 mω maximum drain source resistance.
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