Nexperia PSMN1R2-30YLC,115 N-channel MOSFET, 100 A, 30 V, 4-Pin SOT-669

Nexperia

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
78 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
215 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
1.95V
Channel Type:
N
Width:
4.1mm
Length:
5mm
Minimum Gate Threshold Voltage:
1.05V
Package Type:
LFPAK, SOT-669
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Maximum Drain Source Resistance:
1.65 mΩ
Height:
1.1mm
Maximum Operating Temperature:
+175 °C
Pin Count:
4
Transistor Configuration:
Single
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This is N-channel MOSFET 100 A 30 V 4-Pin SOT-669 manufactured by Nexperia. The manufacturer part number is PSMN1R2-30YLC,115. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 78 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 215 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 1.95v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 4.1mm wide. Its accurate length is 5mm. Whereas its minimum gate threshold voltage includes 1.05v. The package is a sort of lfpak, sot-669. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 1.65 mω maximum drain source resistance. In addition, the height is 1.1mm. It has a maximum operating temperature of +175 °c. It contains 4 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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