Nexperia PMV32UP,215 P-channel MOSFET, 4 A, 20 V, 3-Pin SOT-23
Product Information
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.95V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.45V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15.5 nC @ 4.5 V
Channel Type:
P
Length:
3mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
415 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
36 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship PMV32UP,215 Internationally to many countries around the world.
This is P-channel MOSFET 4 A 20 V 3-Pin SOT-23 manufactured by Nexperia. The manufacturer part number is PMV32UP,215. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.95v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.45v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15.5 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 415 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 36 mω maximum drain source resistance.
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