Nexperia PSMN1R7-60BS,118 N-channel MOSFET, 120 A, 60 V, 3-Pin D2PAK

Nexperia

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
137 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
306 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Channel Type:
N
Width:
11mm
Length:
10.3mm
Minimum Gate Threshold Voltage:
2V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Maximum Drain Source Resistance:
3.1 mΩ
Height:
4.5mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 120 A 60 V 3-Pin D2PAK manufactured by Nexperia. The manufacturer part number is PSMN1R7-60BS,118. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 137 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 306 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 11mm wide. Its accurate length is 10.3mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 3.1 mω maximum drain source resistance. In addition, the height is 4.5mm. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.

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PSMN1R7-60BS, N-channel 60V, 2mΩ standard level MOSFET in D2PAK Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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