Infineon BSC320N20NS3GATMA1 N-channel MOSFET, 36 A, 200 V OptiMOS 3, 8-Pin TDSON

Infineon

Product Information

Maximum Drain Source Voltage:
200 V
Typical Gate Charge @ Vgs:
22 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Series:
OptiMOS™ 3
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
1.1mm
Width:
6.1mm
Length:
5.35mm
Maximum Drain Source Resistance:
32 mΩ
Package Type:
TDSON
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
36 A
Minimum Gate Threshold Voltage:
2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
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This is N-channel MOSFET 36 A 200 V OptiMOS 3 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSC320N20NS3GATMA1. It has a maximum of 200 v drain source voltage. With a typical gate charge at Vgs includes 22 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 125 w maximum power dissipation. The product optimos™ 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 1.1mm. Furthermore, the product is 6.1mm wide. Its accurate length is 5.35mm. It provides up to 32 mω maximum drain source resistance. The package is a sort of tdson. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 36 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.

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BSC320N20NS3 G, OptiMOS3 Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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