ROHM R6025FNZ1C9 N-channel MOSFET, 25 A, 600 V, 3-Pin TO-247
Product Information
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
85 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
446 W
Maximum Gate Source Voltage:
±30 V
Maximum Gate Threshold Voltage:
5V
Height:
21.34mm
Width:
5.21mm
Length:
16.13mm
Maximum Drain Source Resistance:
280 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
25 A
Minimum Gate Threshold Voltage:
3V
Forward Diode Voltage:
1.5V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship R6025FNZ1C9 Internationally to many countries around the world.
This is N-channel MOSFET 25 A 600 V 3-Pin TO-247 manufactured by ROHM. The manufacturer part number is R6025FNZ1C9. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 85 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 446 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. The product carries 5v of maximum gate threshold voltage. In addition, the height is 21.34mm. Furthermore, the product is 5.21mm wide. Its accurate length is 16.13mm. It provides up to 280 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 25 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 3v. Its forward diode voltage is 1.5v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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