Nexperia PMDT290UCE,115 Dual N/P-channel MOSFET, 550 mA, 20 V, 6-Pin SOT-666
Product Information
Maximum Continuous Drain Current:
550 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.95V
Package Type:
SOT-666
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.45 nC @ 4.5 V, 0.76 nC @ 4.5 V
Channel Type:
N, P
Length:
1.7mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
390 mW
Maximum Gate Source Voltage:
+8 V
Height:
0.6mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
380 mΩ, 850 mΩ
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Yes. We ship PMDT290UCE,115 Internationally to many countries around the world.
This is Dual N/P-channel MOSFET 550 mA 20 V 6-Pin SOT-666 manufactured by Nexperia. The manufacturer part number is PMDT290UCE,115. While 550 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.3mm wide. The product offers isolated transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.95v of maximum gate threshold voltage. The package is a sort of sot-666. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.45 nc @ 4.5 v, 0.76 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 1.7mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 390 mw maximum power dissipation. It features a maximum gate source voltage of +8 v. In addition, the height is 0.6mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 380 mω, 850 mω maximum drain source resistance.
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