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United Kingdom
This is NXP N-channel MOSFET 82 A 80 V 4-Pin SOT-669 manufactured by Nexperia. The manufacturer part number is PSMN8R2-80YS,115. It has a maximum of 80 v drain source voltage. With a typical gate charge at Vgs includes 55 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 130 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 4.1mm wide. Its accurate length is 5mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of lfpak, sot-669. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 82 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 13.4 mω maximum drain source resistance. In addition, the height is 1.1mm. It has a maximum operating temperature of +175 °c. It contains 4 pins. The product offers single transistor configuration.
For more information please check the datasheets.
Basket Total:
£ 0.000
