Fuji Electric FMW20N60S1HF N-channel MOSFET, 20 A, 600 V Super J-MOS, 3-Pin TO-247
Product Information
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
48 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
140 W
Series:
Super J-MOS
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.5V
Height:
20.95mm
Width:
5.03mm
Length:
15.9mm
Maximum Drain Source Resistance:
190 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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FAQs
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We accept all major payment methods for all products including ET16801788. Please check your shopping cart at the time of order.
You can order Fuji Electric brand products with FMW20N60S1HF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Fuji Electric FMW20N60S1HF N-channel MOSFET, 20 A, 600 V Super J-MOS, 3-Pin TO-247. You can also check on our website or by contacting our customer support team for further order details on Fuji Electric FMW20N60S1HF N-channel MOSFET, 20 A, 600 V Super J-MOS, 3-Pin TO-247.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16801788 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Fuji Electric" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16801788.
Yes. We ship FMW20N60S1HF Internationally to many countries around the world.
This is N-channel MOSFET 20 A 600 V Super J-MOS 3-Pin TO-247 manufactured by Fuji Electric. The manufacturer part number is FMW20N60S1HF. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 48 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 140 w maximum power dissipation. The product super j-mos, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 20.95mm. Furthermore, the product is 5.03mm wide. Its accurate length is 15.9mm. It provides up to 190 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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