Nexperia PSMN9R0-25MLC,115 N-channel MOSFET, 55 A, 25 V, 8-Pin LFPAK33

Nexperia

Product Information

Maximum Drain Source Voltage:
25 V
Typical Gate Charge @ Vgs:
11.7 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
45 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
1.95V
Channel Type:
N
Width:
2.7mm
Length:
3.4mm
Minimum Gate Threshold Voltage:
1.3V
Package Type:
LFPAK33
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
55 A
Transistor Material:
Si
Maximum Drain Source Resistance:
11.3 mΩ
Height:
0.9mm
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Single
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This is N-channel MOSFET 55 A 25 V 8-Pin LFPAK33 manufactured by Nexperia. The manufacturer part number is PSMN9R0-25MLC,115. It has a maximum of 25 v drain source voltage. With a typical gate charge at Vgs includes 11.7 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 45 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 1.95v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 2.7mm wide. Its accurate length is 3.4mm. Whereas its minimum gate threshold voltage includes 1.3v. The package is a sort of lfpak33. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 55 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 11.3 mω maximum drain source resistance. In addition, the height is 0.9mm. It has a maximum operating temperature of +175 °c. It contains 8 pins. The product offers single transistor configuration.

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PSMN9R0-25MLC N-channel 25V 8.65mOhm logic level MOSFET in LFPAK33 using NextPower Technology datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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