Nexperia PSMN9R0-25MLC,115 N-channel MOSFET, 55 A, 25 V, 8-Pin LFPAK33
Product Information
Maximum Continuous Drain Current:
55 A
Transistor Material:
Si
Width:
2.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Maximum Gate Threshold Voltage:
1.95V
Package Type:
LFPAK33
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
11.7 nC @ 10 V
Channel Type:
N
Length:
3.4mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
45 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.9mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
11.3 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is N-channel MOSFET 55 A 25 V 8-Pin LFPAK33 manufactured by Nexperia. The manufacturer part number is PSMN9R0-25MLC,115. While 55 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.7mm wide. The product offers single transistor configuration. It has a maximum of 25 v drain source voltage. The product carries 1.95v of maximum gate threshold voltage. The package is a sort of lfpak33. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.3v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 11.7 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.4mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 45 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.9mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 11.3 mω maximum drain source resistance.
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