Nexperia PSMN5R0-30YL,115 N-channel MOSFET, 91 A, 30 V, 4-Pin SOT-669

Nexperia

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
29 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
61 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.15V
Channel Type:
N
Width:
4.1mm
Length:
5mm
Minimum Gate Threshold Voltage:
1.3V
Package Type:
LFPAK, SOT-669
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
91 A
Transistor Material:
Si
Maximum Drain Source Resistance:
5 mΩ
Height:
1.1mm
Maximum Operating Temperature:
+175 °C
Pin Count:
4
Transistor Configuration:
Single
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This is N-channel MOSFET 91 A 30 V 4-Pin SOT-669 manufactured by Nexperia. The manufacturer part number is PSMN5R0-30YL,115. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 29 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 61 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.15v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 4.1mm wide. Its accurate length is 5mm. Whereas its minimum gate threshold voltage includes 1.3v. The package is a sort of lfpak, sot-669. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 91 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 5 mω maximum drain source resistance. In addition, the height is 1.1mm. It has a maximum operating temperature of +175 °c. It contains 4 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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