Nexperia PSMN4R5-40PS,127 N-channel MOSFET, 100 A, 40 V, 3-Pin TO-220AB

Nexperia

Product Information

Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
42.3 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
148 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Channel Type:
N
Width:
4.7mm
Length:
10.3mm
Minimum Gate Threshold Voltage:
2V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Maximum Drain Source Resistance:
4.6 mΩ
Height:
16mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 100 A 40 V 3-Pin TO-220AB manufactured by Nexperia. The manufacturer part number is PSMN4R5-40PS,127. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 42.3 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 148 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 4.7mm wide. Its accurate length is 10.3mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 4.6 mω maximum drain source resistance. In addition, the height is 16mm. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.

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PSMN4R5-40PS, N-channel 40V, 4.6mΩ standard level MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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