Nexperia PSMN4R5-40BS,118 N-channel MOSFET, 100 A, 40 V, 3-Pin D2PAK
Product Information
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
11mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
42.3 nC @ 10 V
Channel Type:
N
Length:
10.3mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
148 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
6.5 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is N-channel MOSFET 100 A 40 V 3-Pin D2PAK manufactured by Nexperia. The manufacturer part number is PSMN4R5-40BS,118. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 11mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 42.3 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.3mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 148 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 6.5 mω maximum drain source resistance.
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