Nexperia PSMN4R3-30BL,118 N-channel MOSFET, 100 A, 30 V, 3-Pin D2PAK

Nexperia

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
41.5 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
103 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.15V
Channel Type:
N
Width:
11mm
Length:
10.3mm
Minimum Gate Threshold Voltage:
1.3V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Maximum Drain Source Resistance:
5.8 mΩ
Height:
4.5mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 100 A 30 V 3-Pin D2PAK manufactured by Nexperia. The manufacturer part number is PSMN4R3-30BL,118. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 41.5 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 103 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.15v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 11mm wide. Its accurate length is 10.3mm. Whereas its minimum gate threshold voltage includes 1.3v. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 5.8 mω maximum drain source resistance. In addition, the height is 4.5mm. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.

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PSMN4R3-30BL, N-channel 30V, 4.1mΩ logic level MOSFET in D2PAK Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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