Nexperia PSMN1R5-30YLC,115 N-channel MOSFET, 100 A, 30 V, 4-Pin LFPAK

Nexperia

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
65 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
179 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
1.95V
Channel Type:
N
Width:
4.1mm
Length:
5mm
Minimum Gate Threshold Voltage:
1.05V
Package Type:
LFPAK, SOT-669
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Maximum Drain Source Resistance:
2 mΩ
Height:
1.05mm
Maximum Operating Temperature:
+175 °C
Pin Count:
4
Transistor Configuration:
Single
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This is N-channel MOSFET 100 A 30 V 4-Pin LFPAK manufactured by Nexperia. The manufacturer part number is PSMN1R5-30YLC,115. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 65 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 179 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 1.95v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 4.1mm wide. Its accurate length is 5mm. Whereas its minimum gate threshold voltage includes 1.05v. The package is a sort of lfpak, sot-669. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 2 mω maximum drain source resistance. In addition, the height is 1.05mm. It has a maximum operating temperature of +175 °c. It contains 4 pins. The product offers single transistor configuration.

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PSMN1R5-30YLC N-channel 30V 1.55mOhm logic level MOSFET in LFPAK using NextPower technology datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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