Nexperia PMPB11EN,115 N-channel MOSFET, 9 A, 30 V, 8-Pin DFN2020

Nexperia

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
13.7 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
12.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Channel Type:
N
Width:
2.1mm
Length:
2.1mm
Minimum Gate Threshold Voltage:
1V
Package Type:
DFN2020
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Maximum Drain Source Resistance:
14.5 mΩ
Height:
0.65mm
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
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This is N-channel MOSFET 9 A 30 V 8-Pin DFN2020 manufactured by Nexperia. The manufacturer part number is PMPB11EN,115. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 13.7 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 12.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 2.1mm wide. Its accurate length is 2.1mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of dfn2020. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 14.5 mω maximum drain source resistance. In addition, the height is 0.65mm. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.

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PMPB11EN, 30V N-channel Trench MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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