Nexperia BST82,215 N-channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23
Product Information
Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
830 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3.5V
Height:
1mm
Width:
1.4mm
Length:
3mm
Minimum Gate Threshold Voltage:
1.5V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
190 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
10 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship BST82,215 Internationally to many countries around the world.
This is N-channel MOSFET 190 mA 100 V 3-Pin SOT-23 manufactured by Nexperia. The manufacturer part number is BST82,215. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 830 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 1mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3mm. Whereas its minimum gate threshold voltage includes 1.5v. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. While 190 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 10 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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