Nexperia BSH103,215 N-channel MOSFET, 850 mA, 30 V, 3-Pin SOT-23
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
2.1 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
500 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Width:
1.4mm
Length:
3mm
Minimum Gate Threshold Voltage:
0.4V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
850 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
400 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. We ship BSH103,215 Internationally to many countries around the world.
This is N-channel MOSFET 850 mA 30 V 3-Pin SOT-23 manufactured by Nexperia. The manufacturer part number is BSH103,215. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 2.1 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 500 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3mm. Whereas its minimum gate threshold voltage includes 0.4v. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 850 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 400 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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