Toshiba SSM3K324R N-channel MOSFET, 4 A, 30 V, 3-Pin SOT-23F
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
2.2 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
±12 V
Maximum Gate Threshold Voltage:
1V
Height:
0.7mm
Width:
1.8mm
Length:
2.9mm
Maximum Drain Source Resistance:
109 mΩ
Package Type:
SOT-23F
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
4 A
Minimum Gate Threshold Voltage:
0.4V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 4 A 30 V 3-Pin SOT-23F manufactured by Toshiba. The manufacturer part number is SSM3K324R. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 2.2 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1 w maximum power dissipation. It features a maximum gate source voltage of ±12 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.7mm. Furthermore, the product is 1.8mm wide. Its accurate length is 2.9mm. It provides up to 109 mω maximum drain source resistance. The package is a sort of sot-23f. It consists of 1 elements per chip. While 4 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.4v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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