Minimum DC Current Gain:
80
Transistor Type:
PNP
Dimensions:
15.6 x 4.8 x 19.9mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
130 W
Maximum Collector Base Voltage:
-250 V
Maximum Collector Emitter Voltage:
-250 V
Maximum Operating Frequency:
30 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
TO-3P
Number of Elements per Chip:
1
Maximum DC Collector Current:
-17 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
17 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
250 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
55 @ 1A, 5V
edacadModel:
FJA4213OTU Models
Frequency - Transition:
30MHz
Vce Saturation (Max) @ Ib, Ic:
3V @ 800mA, 8A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1056906
Transistor Type:
PNP
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
Current - Collector Cutoff (Max):
5µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P
Power - Max:
130 W
Base Product Number:
FJA4213
ECCN:
EAR99
