Infineon BSB014N04LX3GXUMA1 N-channel MOSFET, 180 A, 40 V OptiMOS, 2-Pin MG-WDSON-2
Product Information
Maximum Continuous Drain Current:
180 A
Transistor Material:
Si
Width:
5.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2V
Package Type:
MG-WDSON-2
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
148 nC @ 10 V, 71 nC @ 4.5 V
Channel Type:
N
Length:
6.35mm
Pin Count:
2
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
89 W
Series:
OptiMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.6mm
Minimum Operating Temperature:
-40 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
2 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is N-channel MOSFET 180 A 40 V OptiMOS 2-Pin MG-WDSON-2 manufactured by Infineon. The manufacturer part number is BSB014N04LX3GXUMA1. While 180 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.05mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of mg-wdson-2. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 148 nc @ 10 v, 71 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 6.35mm. It contains 2 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 89 w maximum power dissipation. The product optimos, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.6mm. Whereas, the minimum operating temperature of the product is -40 °c. Its forward diode voltage is 1.1v . It provides up to 2 mω maximum drain source resistance.
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