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Infineon BSB014N04LX3GXUMA1 N-channel MOSFET, 180 A, 40 V OptiMOS, 2-Pin MG-WDSON-2

BSB014N04LX3GXUMA1 Infineon  N-channel MOSFET, 180 A, 40 V OptiMOS, 2-Pin MG-WDSON-2
Infineon

Product Information

Maximum Continuous Drain Current:
180 A
Transistor Material:
Si
Width:
5.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2V
Package Type:
MG-WDSON-2
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
148 nC @ 10 V, 71 nC @ 4.5 V
Channel Type:
N
Length:
6.35mm
Pin Count:
2
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
89 W
Series:
OptiMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.6mm
Minimum Operating Temperature:
-40 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
2 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 180 A 40 V OptiMOS 2-Pin MG-WDSON-2 manufactured by Infineon. The manufacturer part number is BSB014N04LX3GXUMA1. While 180 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.05mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of mg-wdson-2. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 148 nc @ 10 v, 71 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 6.35mm. It contains 2 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 89 w maximum power dissipation. The product optimos, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.6mm. Whereas, the minimum operating temperature of the product is -40 °c. Its forward diode voltage is 1.1v . It provides up to 2 mω maximum drain source resistance.

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BSB014N04LX3 G OptiMOS N-Channel Power MOSFET(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

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FAQs

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You can order Infineon brand products with BSB014N04LX3GXUMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon BSB014N04LX3GXUMA1 N-channel MOSFET, 180 A, 40 V OptiMOS, 2-Pin MG-WDSON-2. You can also check on our website or by contacting our customer support team for further order details on Infineon BSB014N04LX3GXUMA1 N-channel MOSFET, 180 A, 40 V OptiMOS, 2-Pin MG-WDSON-2.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16792428 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16792428.
Yes. We ship BSB014N04LX3GXUMA1 Internationally to many countries around the world.