ROHM UT6K3TCR Dual N-channel MOSFET, 5.5 A, 30 V UT6K3, 8-Pin DFN
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
4 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
UT6K3
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1.5V
Height:
0.6mm
Width:
2.1mm
Length:
2.1mm
Maximum Drain Source Resistance:
63 mΩ
Package Type:
DFN
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
5.5 A
Minimum Gate Threshold Voltage:
0.5V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Dual Base
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FAQs
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You can order ROHM brand products with UT6K3TCR directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ROHM UT6K3TCR Dual N-channel MOSFET, 5.5 A, 30 V UT6K3, 8-Pin DFN. You can also check on our website or by contacting our customer support team for further order details on ROHM UT6K3TCR Dual N-channel MOSFET, 5.5 A, 30 V UT6K3, 8-Pin DFN.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16782885 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ROHM" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16782885.
Yes. We ship UT6K3TCR Internationally to many countries around the world.
This is Dual N-channel MOSFET 5.5 A 30 V UT6K3 8-Pin DFN manufactured by ROHM. The manufacturer part number is UT6K3TCR. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 4 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. The product ut6k3, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. The product carries 1.5v of maximum gate threshold voltage. In addition, the height is 0.6mm. Furthermore, the product is 2.1mm wide. Its accurate length is 2.1mm. It provides up to 63 mω maximum drain source resistance. The package is a sort of dfn. It consists of 2 elements per chip. While 5.5 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.5v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers dual base transistor configuration.
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