ROHM US6K4TR Dual N-channel MOSFET, 1.5 A, 20 V US6K4, 6-Pin TUMT
Product Information
Maximum Continuous Drain Current:
1.5 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Dual Base
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
TUMT
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.8 nC @ 4.5 V
Channel Type:
N
Length:
2mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1 W
Series:
US6K4
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
0.77mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
310 mΩ
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FAQs
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You can order ROHM brand products with US6K4TR directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ROHM US6K4TR Dual N-channel MOSFET, 1.5 A, 20 V US6K4, 6-Pin TUMT. You can also check on our website or by contacting our customer support team for further order details on ROHM US6K4TR Dual N-channel MOSFET, 1.5 A, 20 V US6K4, 6-Pin TUMT.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16782881 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ROHM" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16782881.
Yes. We ship US6K4TR Internationally to many countries around the world.
This is Dual N-channel MOSFET 1.5 A 20 V US6K4 6-Pin TUMT manufactured by ROHM. The manufacturer part number is US6K4TR. While 1.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers dual base transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of tumt. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.8 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1 w maximum power dissipation. The product us6k4, is a highly preferred choice for users. It features a maximum gate source voltage of -10 v, +10 v. In addition, the height is 0.77mm. Its forward diode voltage is 1.2v . It provides up to 310 mω maximum drain source resistance.
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