Maximum Drain Source Voltage:
45 V
Typical Gate Charge @ Vgs:
13 nC @ 5 V (P Channel), 6.8 nC @ 5 V (N Channel)
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.1 W
Series:
SH8M24GZE
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.5 (N Channel) V, 2.5 (P Channel) V
Height:
1.6mm
Width:
4.05mm
Length:
5.2mm
Maximum Drain Source Resistance:
92 mΩ
Package Type:
SOP
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
6 A
Minimum Gate Threshold Voltage:
1 (N Channel) V, 1 (P Channel) V
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
This is Dual N/P-channel MOSFET 6 (N Channel P Channel) A 45 (N Channel) V 45 (P Channel) V SH8M24GZE manufactured by ROHM. The manufacturer part number is SH8M24GZETB. It has a maximum of 45 v drain source voltage. With a typical gate charge at Vgs includes 13 nc @ 5 v (p channel), 6.8 nc @ 5 v (n channel). The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3.1 w maximum power dissipation. The product sh8m24gze, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. The product carries 2.5 (n channel) v, 2.5 (p channel) v of maximum gate threshold voltage. In addition, the height is 1.6mm. Furthermore, the product is 4.05mm wide. Its accurate length is 5.2mm. It provides up to 92 mω maximum drain source resistance. The package is a sort of sop. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 6 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1 (n channel) v, 1 (p channel) v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins.
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