ROHM SCT2H12NYTB N-channel SiC MOSFET, 4 A, 1700 V, 2 + Tab-Pin TO-268
Product Information
Maximum Drain Source Voltage:
1700 V
Typical Gate Charge @ Vgs:
14 nC @ 18 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
44 W
Maximum Gate Source Voltage:
22 V
Maximum Gate Threshold Voltage:
4V
Channel Type:
N
Width:
13.9mm
Length:
15.95mm
Minimum Gate Threshold Voltage:
1.6V
Package Type:
TO-268
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
4 A
Transistor Material:
SiC
Forward Diode Voltage:
4.3V
Maximum Drain Source Resistance:
1.71 Ω
Height:
5mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ROHM SCT2H12NYTB N-channel SiC MOSFET, 4 A, 1700 V, 2 + Tab-Pin TO-268. You can also check on our website or by contacting our customer support team for further order details on ROHM SCT2H12NYTB N-channel SiC MOSFET, 4 A, 1700 V, 2 + Tab-Pin TO-268.
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Yes. We ship SCT2H12NYTB Internationally to many countries around the world.
This is N-channel SiC MOSFET 4 A 1700 V 2 + Tab-Pin TO-268 manufactured by ROHM. The manufacturer part number is SCT2H12NYTB. It has a maximum of 1700 v drain source voltage. With a typical gate charge at Vgs includes 14 nc @ 18 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 44 w maximum power dissipation. It features a maximum gate source voltage of 22 v. The product carries 4v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 13.9mm wide. Its accurate length is 15.95mm. Whereas its minimum gate threshold voltage includes 1.6v. The package is a sort of to-268. It consists of 1 elements per chip. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. Its forward diode voltage is 4.3v . It provides up to 1.71 ω maximum drain source resistance. In addition, the height is 5mm. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
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