ROHM RW1C025ZPT2CR P-channel MOSFET, 2.5 A, 20 V RW1C025ZP, 6-Pin SOT-563T
Product Information
Maximum Continuous Drain Current:
2.5 A
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
SOT-563T
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10.5 nC @ 4.5 V
Channel Type:
P
Length:
1.7mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
700 mW
Series:
RW1C025ZP
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
0.6mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
240 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ROHM RW1C025ZPT2CR P-channel MOSFET, 2.5 A, 20 V RW1C025ZP, 6-Pin SOT-563T. You can also check on our website or by contacting our customer support team for further order details on ROHM RW1C025ZPT2CR P-channel MOSFET, 2.5 A, 20 V RW1C025ZP, 6-Pin SOT-563T.
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Yes. We ship RW1C025ZPT2CR Internationally to many countries around the world.
This is P-channel MOSFET 2.5 A 20 V RW1C025ZP 6-Pin SOT-563T manufactured by ROHM. The manufacturer part number is RW1C025ZPT2CR. While 2.5 a of maximum continuous drain current. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of sot-563t. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 10.5 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 1.7mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 700 mw maximum power dissipation. The product rw1c025zp, is a highly preferred choice for users. It features a maximum gate source voltage of -10 v, +10 v. In addition, the height is 0.6mm. Its forward diode voltage is 1.2v . It provides up to 240 mω maximum drain source resistance.
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