ROHM RSJ151P10TL P-channel MOSFET, 15 A, 100 V RSJ151P10, 3-Pin D2PAK
Product Information
Maximum Continuous Drain Current:
15 A
Width:
9.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
64 nC @ 10 V
Channel Type:
P
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
50 W
Series:
RSJ151P10
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.7mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
220 mΩ
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Yes. We ship RSJ151P10TL Internationally to many countries around the world.
This is P-channel MOSFET 15 A 100 V RSJ151P10 3-Pin D2PAK manufactured by ROHM. The manufacturer part number is RSJ151P10TL. While 15 a of maximum continuous drain current. Furthermore, the product is 9.2mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 64 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 50 w maximum power dissipation. The product rsj151p10, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.7mm. Its forward diode voltage is 1.2v . It provides up to 220 mω maximum drain source resistance.
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